One Dimensional Simulation of Polysilicon Emitter Transistors under High-level Injection 大注入下多晶硅发射极晶体管特性的一维模拟
The bipolar transistors with poly-silicon emitter suitable for low temperature and low injection current operation are presented. 介绍了一种用于低温、小注入电流条件下工作的新型多晶硅发射区双极晶体管,并给出了晶体管电流增益的低温模型。
The Simulation of Device Characteristic and Theoretical Analysis of Polysilicon Emitter Transistors under High-Level Injection 在大注入下多晶硅发射极晶体管特性模拟与理论分析
The current gain and frequency response ( fT and fmax) of PET with exponential doping profile in emitter and base under high-level injection have been simulated by taking the measured data of studied device as the input pa-rameters. 结合实例模拟了在大注入下具有发射区、基区指数掺杂分布的PET的电流增益和频率特性(fT人和fmax)。